3GB RAM of your Galaxy Note 3 seems to be more than enough for you, then there is much more on your way from Samsung. Samsung has just unleashed a new 8Gb low power DDR4 DRAM. Wait, and hold your horse, before you get excited, as it is not an 8GB of RAM. The 8Gb here refers to just 8 Giga bit, roughly equals to 1GB when it gets translated. It might not sound much heavy right? Then what makes it so special?
Let me explain, Samsung uses 20nm manufacturing process to finish the chip, and offers 1GB of RAM in a single chip, offering largest density in a single silicon die. Four of those 8Gb chips will combine to offer a total of 4GB of RAM, in a multi-layered mobile sized package.
Young-Hyun Jun, Executive vice president, memory sales and marketing, Samsung said in the press release that
“This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “We will continue introducing the most advanced mobile DRAM one step ahead of the rest of the industry so that global OEMs can launch innovative mobile devices with exceptional user convenience in the timeliest manner.”
The main features of LPDDR4 DRAM from Samsung are
- The chip is fabricated based on 20nm process technology
- Offers 1GB on a single die, thus offering largest density
- The four of 8Gb chips in effect offers a single 4GB LPDDR4 RAM, with the highest level of performance
- Uses LVSTL (Low Voltage Swing Terminated Logic) I/O interface
- Data transfer rate of 3,200 megabits per second per pin, twice that of a a 20-nm class LPDDR3 DRAM
- Consumes approximately 40 percent less energy at 1.1 volts, and offers 50 percent higher performance
Via : Samsung Tomorrow